View HCTS85MS02_4138948.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TM
HCTS85MS
Radiation Hardened 4-Bit Magnitude Comparator
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW
B3 1 (AB)IN 4 (AB)OUT 7 GND 8 16 VCC 15 A3 14 B2 13 A2 12 A1 11 B1 10 A0 9 B0
September 1995
Features
* * * * * * * * * * * * 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Fanout (Over Temperature Range) -Standard Outputs: 10 LSTTL Loads Military Temperature Range: -55oC to +125 oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V LSTTL Input Compatibility -VIL = 0.8V Max -VIH = VCC/2 Min Input Current Levels Ii 5A at VOL, VOH
*
Description
The Intersil HCTS85MS is a Radiation Hardened 4-bit high speed magnitude comparator. This device compares two binary, BCD, or other monotonic codes and presents the three possible magnitude results at the outputs (A>B, A16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C TOP VIEW
B3 (AB)IN (AB)OUT GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC A3 B2 A2 A1 B1 A0 B0
Ordering Information
PART NUMBER HCTS85DMSR HCTS85KMSR HCTS85D/Sample HCTS85K/Sample HCTS85HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 16 Lead SBDIP 16 Lead Ceramic Flatpack 16 Lead SBDIP 16 Lead Ceramic Flatpack Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
1
518624 FN3059.1
HCTS85MS Functional Block Diagram
B3 1 B3 15 A3 A3 A3 B2 14 B2 13 A2 A2 A2 B1 11 B1 12 A1 4 (A>B) IN B0 9 B0 10 A0 A0 A0 3 (A=B) IN 2 (AB) OUT B0 A1 A1 B0 A0 B0 A0 B1 6 (A=B) OUT B2 B3 A2 B2 A3 B3 A1 B1 7 (ACOMPARING INPUTS A3, B3 A3>B3 A3B2 A2B1 A1B0 A0TRUTH TABLE CASCADING INPUTS A>B X X X X X X X X H L L X H L AB H L H L H L H L H L L L L H
OUTPUTS ANOTE: L = Logic Level Low, H = Logic Level High, x = Immaterial
Spec Number 2
518624
Specifications HCTS85MS
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . 10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . 25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W o Maximum Package Power Dissipation at +125 C Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . 500ns Max. Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
0.5 5.0 -
A A -
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 3
518624
Specifications HCTS85MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Bn to (A>B)OUT TPHL, TPLH VCC = 4.5V 9 10, 11 An, Bn to (AB)OUT TPHL, TPLH VCC = 4.5V 9 10, 11 (A>B)IN to (A>B)OUT TPHL, TPLH VCC = 4.5V 9 10, 11 (A=B)IN to (A=B)OUT TPHL, TPLH VCC = 4.5V 9 10, 11 (APARAMETER An to (A>B)OUT
SYMBOL TPHL, TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TTHL, TTLH VCC = 4.5V 1 1 TEMPERATURE +25 C +125o C, -55 C
o o
MIN -
MAX 39 92 10 10 15 22
UNITS pF pF pF pF ns ns
+25oC +125 C, -55 C +25o +125oC, C
o o
-
-55oC
Spec Number 4
518624
Specifications HCTS85MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) VCC = 4.5V TEMPERATURE +25oC +25oC MIN 4.0 MAX 0.750 UNITS mA mA
Output Current (Source) Output Voltage Low
IOH
+25oC
-4.0
-
mA
VOL
+25oC
-
0.1
V
Output Voltage High
VOH
+25oC
VCC -0.1 -
-
V
Input Leakage Current Noise Immunity Functional Test An to (A>B)OUT
IIN FN
+25oC +25oC
5 -
A -
TPHL, TPLH TPHL, TPLH TPHL, TPLH TPHL, TPLH TPHL, TPLH TPHL, TPLH TPHL, TPLH
+25oC
2
43
ns
Bn to (A>B)OUT
VCC = 4.5V
+25oC
2
66
ns
An, Bn to (AVCC = 4.5V
+25oC
2
51
ns
An, Bn to (A=B)OUT
VCC = 4.5V
+25oC
2
50
ns
(AVCC = 4.5V
+25oC
2
35
ns
(A>B)IN to (A>B)OUT
VCC = 4.5V
+25oC
2
40
ns
(A=B)IN to (A=B)OUT
VCC = 4.5V
+25oC
2
37
ns
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 12A -15% of 0 Hour
Spec Number 5
518624
Specifications HCTS85MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11, (Note 2) READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 5, 6, 7 1 - 4, 8 - 15 16 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 5, 6, 7 8 1 - 4, 9 - 16 -
DYNAMIC BURN-IN TEST CONDITIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1K 5% for dynamic burn-in. 1, 8, 10, 11, 13 5, 6, 7 2, 3, 4, 16 12, 15 9, 14
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 5, 6, 7, GROUND 8 VCC = 5V 0.5V 1 - 4, 9 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 6
518624
HCTS85MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
Spec Number 7
518624
HCTS85MS AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL CL = 50pF OUTPUT RL = 500 INPUT CL RL
AC Load Circuit
DUT TEST POINT
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.00 1.30 0 0 UNITS V V V V V
Spec Number 8
518624
HCTS85MS Die Characteristics
DIE DIMENSIONS: 100 x 100 mils METALLIZATION: Type: SiAl Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
(AHCTS85MS
VCC (16) A3 (15)
(A=B)IN(3) (14) B2
(A>B)IN(4)
(13) A2
(A(12) A1
(A=B)OUT(6) (11) B1
(7) (A>B)OUT
(8) GND
(9) B0
(10) A0
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com Spec Number 9
518624

▲Up To Search▲

Price & Availability of HCTS85MS02

	To Download HCTS85MS02 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .